2008. 6. 10 1/5 semiconductor technical data KMB3D9N40TA n-ch trench mosfet revision no : 0 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for load switch and back-light inverter. features v dss =40v, i d =3.9a drain-source on resistance r ds(on) =45m (max.) @ v gs =10v r ds(on) =58m (max.) @ v gs =4.5v super high dense cell design maximum rating (ta=25 ) dim millimeters a b d e tsm 2.9 0.2 1.6+0.2/-0.1 0.70 0.05 0.4 0.1 2.8+0.2/-0.3 1.9 0.2 0.95 0.16 0.05 0.00-0.10 0.25+0.25/-0.15 c f g h i j k 0.60 l 0.55 a f g g d k b e c l h j j i 2 1 3 + _ + _ + _ + _ + _ note > *surface mounted on 1 1 fr4 board, t 5sec pin connection (top view) characteristic symbol n-ch unit drain-source voltage v dss 40 v gate-source voltage v gss 20 v drain current dc@ta=25 i d 3.9 a dc@ta=70 3.1 pulsed i dp 16 drain-source-diode forward current i s 0.8 a drain power dissipation ta=25 p d 1.25 w ta=70 0.8 maximum junction temperature t j 150 storage temperature range t stg -55 150 thermal resistance, junction to ambient r thja 100 /w 2 3 1 gs d 1 2 3 type name lot no. a 2 marking
2008. 6. 10 2/5 KMB3D9N40TA revision no : 0 electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss v gs =0v, i ds =250 a 40 - - v drain cut-off current i dss v gs =0v, v ds =32v - - 0.5 a v gs =0v, v ds =32v, tj=55 - - 10 gate leakage current i gss v gs = 20v, v ds =0v - - 100 na gate threshold voltage v th * v ds =v gs, i d =250 a 1.0 - 3.0 v drain-source on resistance r ds(on) * v gs =10v, i d =3.9a - 29 45 m v gs =4.5v, i d =3.5a - 42 58 forward transconductance g fs * v ds =10v, i d =3.9a - 11 - s dynamic input capaclitance c iss v ds =20v, f=1mhz, v gs =0v - 446 - pf ouput capacitance c oss - 78 - reverse transfer capacitance c rss - 40 - total gate charge q g * v ds =20v, v gs =10v, i d =3.9a - 9.3 - nc gate-source charge q gs * - 1.8 - gate-drain charge q gd * - 2.0 - turn-on delay time t d(on) * v dd =20v, v gs =10v i d =1a, r g =6 - 10.3 - ns turn-on rise time t r * - 5.4 - turn-off delay time t d(off) * - 28.2 - turn-off fall time t f * - 4.0 - source-drain diode ratings source-drain forward voltage v sdf * v gs =0v, i s =1a - 0.8 1.2 v note > *pulse test : pulse width <300 , duty cycle < 2%
2008. 6. 10 3/5 KMB3D9N40TA revision no : 0
2008. 6. 10 4/5 KMB3D9N40TA revision no : 0
2008. 6. 10 5/5 KMB3D9N40TA revision no : 0
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